PMOS TRANSISTORS IN LPCVD POLYCRYSTALLINE SILICON-GERMANIUM FILMS

被引：36

作者：

KING, TJ ^{[1
]}

SARASWAT, KC ^{[1
]}

PFIESTER, JR ^{[1
]}

机构：

[1] MOTOROLA INC,ADV PROD RES & DEV LAB,AUSTIN,TX 78721

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 11期

关键词：

D O I：

10.1109/55.119205

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

P-channel MOS thin-film transistors (TFT's) have been fabricated in low-pressure chemical vapor deposition (LPCVD) polycrystalline silicon-germanium (poly-SiGe) films using either a low-temperature ( less-than-or-equal-to 600-degrees-C) process or a high-temperature (up to 950-degrees-C) process. Transistors with drawn channel lengths as small as 2-mu-m show well-behaved characteristics. A poly-SiGe TFT technology allows the use of lower anneal temperatures and shorter anneal times as compared to a poly-Si TFT technology. Therefore, it is attractive for a variety of applications including 3-D integrated circuits and large-area display drivers.

引用

页码：584 / 586

页数：3

共 12 条

[1] A STUDY OF HYDROGEN PASSIVATION OF GRAIN-BOUNDARIES IN POLYSILICON THIN-FILM TRANSISTORS
FAUGHNAN, B
IPRI, AC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (01) : 101 - 107
[2] ANOMALOUS LEAKAGE CURRENT IN LPCVD POLYSILICON MOSFETS
FOSSUM, JG
ORTIZCONDE, A
SHICHIJO, H
BANERJEE, SK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1878 - 1884
[3] AVALANCHE-INDUCED EFFECTS IN POLYSILICON THIN-FILM TRANSISTORS
HACK, M
LEWIS, AG
[J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (05) : 203 - 205
[4] POLYCRYSTALLINE-SILICON DEVICE TECHNOLOGY FOR LARGE-AREA ELECTRONICS
HAWKINS, WG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (04) : 477 - 481
[5] Ikeda S., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P469, DOI 10.1109/IEDM.1990.237066
[6] King T.-J., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P253, DOI 10.1109/IEDM.1990.237181
[7] Lewis A. G., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P260, DOI 10.1109/IEDM.1988.32806
[8] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON
MALHI, SDS
SHICHIJO, H
BANERJEE, SK
SUNDARESAN, R
ELAHY, M
POLLACK, GP
RICHARDSON, WF
SHAH, AH
HITE, LR
WOMACK, RH
CHATTERJEE, PK
LAM, HW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 258 - 281
[9] Ohshima H., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P157, DOI 10.1109/IEDM.1989.74250
[10] SILICON-GERMANIUM ALLOYS AND HETEROSTRUCTURES - OPTICAL AND ELECTRONIC-PROPERTIES
PEARSALL, TP
[J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1989, 15 (06): : 551 - &

← 1 2 →