THE INFLUENCE OF ELECTRODEPOSITED GOLD ON THE PROPERTIES OF III-V-SEMICONDUCTOR ELECTRODES .1. RESULTS OF CURRENT POTENTIAL MEASUREMENTS ON P-GAAS

被引：21

作者：

OSKAM, G

VANMAEKELBERGH, D

KELLY, JJ

机构：

[1] Debye Research Institute, University of Utrecht, 3508 TA Utrecht

来源：

ELECTROCHIMICA ACTA | 1993年 / 38卷 / 2-3期

关键词：

ELECTRODEPOSITION; GAAS; SEMICONDUCTOR METAL ELECTRODES; SCHOTTKY DIODE; OHMIC CONTACT;

D O I：

10.1016/0013-4686(93)85142-L

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The influence of electrodeposition of gold on the electrochemical properties of p-type GaAs has been studied. From current potential and impedance measurements performed in solutions containing various redox-couples it was concluded that gold-related surface states play a central role in the interaction between semiconductor, metal and electrolyte solution. A kinetic model is presented which comprises three processes: (i) excitation of valence band electrons to the surface states, (ii) recombination of these electrons with holes in the valence band and (iii) transfer of electrons from the surface states to an electron acceptor in solution.

引用

页码：291 / 300

页数：10

共 30 条

[21] HIGH BARRIER GAAS METAL SCHOTTKY JUNCTIONS PRODUCED BY ELECTROCHEMICAL METAL-DEPOSITION [J].