METAL-SEMICONDUCTOR INTERFACES

被引：20

作者：

WILLIAMS, RH

机构：

[1] Department of Physics, University of Wales College of Cardiff, Cardiff, CF1 3TH

来源：

SURFACE SCIENCE | 1991年 / 251卷

关键词：

D O I：

10.1016/0039-6028(91)90945-O

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

When a metal is deposited on a semiconductor surface electrical barriers may be formed. In recent years the surface science approach has been extensively used to explore the evolution of these Schottky barriers and the detailed origin of the associated interface states. In addition, theoretical estimates of such states have been successful in describing the experimental data for low and high metal coverages. The present situation is reviewed and in particular the status of the various models of electrical barrier formation. Recent new approaches are also highlighted, in particular the possibility of measuring and probing Schottky barrier heights, with high lateral resolution, by ballistic electron emission microscopy.

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页码：12 / 21

页数：10

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