OHMIC CONTACTS TO P-CUINSE2 CRYSTALS

被引:31
作者
MOONS, E
ENGELHARD, T
CAHEN, D
机构
[1] Department of Materials and Interfaces, The Weizmann Institute of Science, Rehovot
关键词
CHEMICAL ETCH; CONTACT ANGLE; CUINSE2; OHMIC CONTACT; METAL-SEMICONDUCTOR; IV CHARACTERISTICS;
D O I
10.1007/BF02661377
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report here on the optimization of ohmic contacts to p-CuInSe2 (CISe) single crystals. A low resistance ohmic contact is required to minimize current losses due to series resistance; e.g. in Schottky diodes. Both In-Ga (eutectic)/CISe and gold (evaporated)/CISe contacts have been fabricated on crystals with different orientations and bulk properties. Gold contacts were found to have a lower resistance and to be more stable than In-Ga ones, from the slope of the linear current-voltage plot of the junctions. The resistance of the Au/CISe ohmic contact was decreased by etching the CISe crystal surface chemically in a 0.5% solution of Br2 in methanol for 30 sec at room temperature, prior to gold deposition, while that of the In-Ga contact increased by this etch. Wetting experiments and contact angle measurements showed evidence for changes in the polarity of the surface due to chemical etches.
引用
收藏
页码:275 / 280
页数:6
相关论文
共 37 条
[1]   INTERFACE PROPERTIES OF (CD,ZN)S/CUINSE2 SINGLE-CRYSTAL SOLAR-CELLS [J].
ABOUELFOTOUH, FA ;
KAZMERSKI, LL ;
COUTTS, TJ ;
MATSON, RJ ;
ASHER, SE ;
NELSON, AJ ;
SWARTZLANDERFRANZ, AB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :837-841
[2]   STUDIES OF THE ELECTRICAL AND INTERFACE PROPERTIES OF THE METAL CONTACTS TO CUINSE2 SINGLE-CRYSTALS [J].
ABOUELFOTOUH, FA ;
KAZMERSKI, LL ;
MATSON, RJ ;
DUNLAVY, DJ ;
COUTTS, TJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (04) :3251-3254
[3]   CHARACTERIZATION OF THE ANOMALOUS 2ND JUNCTION IN MO CUINSE2 (CDZN)S ITO SOLAR-CELLS [J].
BOWRON, JW ;
DAMASKINOS, SD ;
DIXON, AE .
SOLAR CELLS, 1991, 31 (02) :159-169
[4]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[5]   N-CUINSE2 PHOTOELECTROCHEMICAL CELLS [J].
CAHEN, D ;
CHEN, YW ;
NOUFI, R ;
AHRENKIEL, R ;
MATSON, R ;
TOMKIEWICZ, M ;
SHEN, WM .
SOLAR CELLS, 1986, 16 (1-4) :529-548
[6]   DEFECT CHEMICAL EXPLANATION FOR THE EFFECT OF AIR ANNEAL ON CDS/CULNSE2 SOLAR-CELL PERFORMANCE [J].
CAHEN, D ;
NOUFI, R .
APPLIED PHYSICS LETTERS, 1989, 54 (06) :558-560
[7]   X-RAY PHOTOELECTRON AND AUGER-ELECTRON SPECTROSCOPIC ANALYSIS OF SURFACE TREATMENTS AND ELECTROCHEMICAL DECOMPOSITION OF CUINSE2 PHOTOELECTRODES [J].
CAHEN, D ;
IRELAND, PJ ;
KAZMERSKI, LL ;
THIEL, FA .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) :4761-4771
[8]   SURFACE PASSIVATION OF POLYCRYSTALLINE, CHALCOGENIDE BASED PHOTOVOLTAIC CELLS [J].
CAHEN, D ;
NOUFI, R .
SOLAR CELLS, 1991, 30 (1-4) :53-59
[9]  
CAHEN D, 1987, TERNARY ADAMANTINE M
[10]   Doping of CuInSe2 Crystals: Evidence for Influence of Thermal Defects [J].
Cahen, David ;
Abecassis, Daniel ;
Soltz, David .
CHEMISTRY OF MATERIALS, 1989, 1 (02) :202-207