DOUBLE-HTEROSTRUCTURE GAAS/ALGAAS LASERS ON SI SUBSTRATES WITH REDUCED THRESHOLD CURRENT AND BUILT-IN INDEX GUIDING BY SELECTIVE-AREA MOLECULAR-BEAM EPITAXY

被引:15
作者
LEE, HP
LIU, XM
WANG, S
机构
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY,ELECTR RES LABS,BERKELEY,CA 94720
关键词
D O I
10.1063/1.102602
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report successful fabrication of GaAs/Al0.26Ga 0.74As double-heterostructure laser diodes grown on patterned Si substrates by molecular beam epitaxy. The patterned substrates consist of exposed Si stripes with widths ranging from 9 to 70 μm and surrounded by 900 Å of SiN films on both sides. Oxide-defined contact stripe lasers with stripe widths ranging from 3 to 50 μm (corresponding to each of the SiN-defined stripe windows) were fabricated. Reduction of laser threshold current densities compared to similar lasers grown on nonpatterned Si substrates is observed, and is attributed to current confinement effect by the high-resistivity polycrystalline GaAs/AlGaAs films surrounding the active devices. From the measurements on the longitudinal mode spectrum and far-field patterns, lateral index guiding is also observed for the 10-μm-wide selective-area grown laser.
引用
收藏
页码:1014 / 1016
页数:3
相关论文
共 14 条
  • [1] MINORITY-CARRIER PROPERTIES OF GAAS ON SILICON
    AHRENKIEL, RK
    ALJASSIM, MM
    DUNLAVY, DJ
    JONES, KM
    VERNON, SM
    TOBIN, SP
    HAVEN, VE
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (03) : 222 - 224
  • [2] GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE)
    CHO, AY
    BALLAMY, WC
    [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 783 - 785
  • [3] CHOI C, 1978, J APPL PHYS, V53, P2552
  • [4] CHOI HK, 1987, MATER RES SOC S P, V91, P213
  • [5] HONG MH, 1986, THESIS U CALIFORNIA
  • [6] HONG MH, 1988, APPL PHYS LETT, V53, P2435
  • [7] LEE HH, UNPUB
  • [8] PHOTOLUMINESCENCE STUDIES OF SELECTIVE-AREA MOLECULAR-BEAM EPITAXY OF GAAS FILM ON SI SUBSTRATE
    LEE, HP
    WANG, S
    HUANG, YH
    YU, P
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (03) : 215 - 217
  • [9] IMPROVEMENT IN THE CRYSTALLINE QUALITY OF HETEROEPITAXIAL GAAS ON SI FILMS GROWN BY MODULATED MOLECULAR-BEAM EPITAXY
    LEE, HP
    LIU, XM
    WANG, S
    GEORGE, T
    WEBER, ER
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (26) : 2695 - 2697
  • [10] LEE HP, 1988, MAT RES SOC S P PITT, V116, P219