PHOTOLUMINESCENCE STUDIES OF SELECTIVE-AREA MOLECULAR-BEAM EPITAXY OF GAAS FILM ON SI SUBSTRATE

[1] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817

[2] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 275 - 284

[3] GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE) [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 783 - 785

[4] FAN JCC, 1986, MATERIALS RES SOC S, V67

[5] FISHER R, 1986, APPL PHYS LETT, V48, P1223, DOI DOI 10.1063/1.96988

[6] HUANG YN, UNPUB

[7] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : 666 - 671

[8] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 31 - 33

[9] OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1309 - 1311

[10] GAAS E/D MESFET 1-KBIT STATIC RAM FABRICATED ON SILICON SUBSTRATE [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (03) : 121 - 123

[1] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817

[2] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 275 - 284

[3] GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE) [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 783 - 785

[4] FAN JCC, 1986, MATERIALS RES SOC S, V67

[5] FISHER R, 1986, APPL PHYS LETT, V48, P1223, DOI DOI 10.1063/1.96988

[6] HUANG YN, UNPUB

[7] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : 666 - 671

[8] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 31 - 33

[9] OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1309 - 1311

[10] GAAS E/D MESFET 1-KBIT STATIC RAM FABRICATED ON SILICON SUBSTRATE [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (03) : 121 - 123