OPTIMUM COMPOSITION IN MBE-ZNSXSE1-X GAAS FOR HIGH-QUALITY HETEROEPITAXIAL GROWTH

被引：2

作者：

MATSUMURA, N

TSUBOKURA, M

MIYAGAWA, K

NAKAMURA, N

SARAIE, J

机构：

[1] Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Kyoto

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 99卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90561-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

An optimum composition x of MBE-ZnSxSe1-x/GaAs has been studied by surface morphology, X-ray diffraction and fluorescence microscopic study to obtain epilayers with the best quality. The epilayers with a lattice-matching composition at the growth temperature (xgt=0.083) had extremely smooth surfaces and the minimum FWHM of X-ray rocking curves in spite of thermal strain. Also, the orange emission due to Ga diffusion from the substrate was not observed at the epilayer-substrate interface in these epilayers. The epilayers with the best quality were grown with the composition of xgt. © 1990.

引用

页码：446 / 450

页数：5

共 9 条

[1] HIRAHARA K, 1987, 34TH SPRING M JAPAN
[2] THERMAL-STABILITY OF NEARLY LATTICE-MATCHED ZNSSE/GAAS INTERFACE GROWN BY MOVPE
KANDA, T
SUEMUNE, I
YAMADA, K
KAN, Y
YAMANISHI, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 662 - 666
[3] MBE GROWTH OF HIGH-QUALITY LATTICE-MATCHED ZNSXSE1-X ON GAAS SUBSTRATES
MATSUMURA, N
TSUBOKURA, M
SARAIE, J
YODOGAWA, Y
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 311 - 317
[4] GROWTH OF ZNSXSE1-X BY MBE ON (100)GAAS SUBSTRATES - EFFECT OF LATTICE-MATCHING
MATSUMURA, N
ISHIKAWA, K
SARAIE, J
YODOGAWA, Y
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 41 - 45
[5] LATTICE STRAIN AND ITS EFFECTS ON ENERGY-BAND STRUCTURE IN MBE-ZNSXSE1-X/GAAS
MATSUMURA, N
TSUBOKURA, M
SARAIE, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 525 - 528
[6] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2
[7] EFFECT OF SUBSTRATE AUTODOPING ON MOVPE-GROWN ZNSXSE1-X AND ZNSE - ANALYSIS BY PHOTOLUMINESCENCE (PL) AND SECONDARY ION MASS-SPECTROMETRY (SIMS)
MAUNG, N
WILLIAMS, JO
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 629 - 633
[8] MURASE T, 1987, 34TH SPRING M JAP SO
[9] Y-LINE EMISSION AND LATTICE-RELAXATION IN MBE-ZNSE AND MBE-ZNSSE ON GAAS
SARAIE, J
MATSUMURA, N
TSUBOKURA, M
MIYAGAWA, K
NAKAMURA, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (01): : L108 - L111

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