Y-LINE EMISSION AND LATTICE-RELAXATION IN MBE-ZNSE AND MBE-ZNSSE ON GAAS

[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &

[2] COMPARISON OF MOCVD-GROWN WITH CONVENTIONAL II-VI MATERIALS PARAMETERS FOR EL THIN-FILMS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1984, 81 (02): : 625 - 646

[3] ROLE OF EXPERIMENTAL RESOLUTION IN MEASUREMENTS OF CRITICAL LAYER THICKNESS FOR STRAINED-LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (14) : 1080 - 1081

[4] LATTICE-MISMATCH EFFECTS ON PROPERTIES IN ZNSE LAYER GROWN ON GAAS SUBSTRATE BY LOW-PRESSURE OMVPE [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 27 - 30

[5] HIBATA N, 1988, JPN J APPL PHYS, V27, pL441

[6] MBE GROWTH OF HIGH-QUALITY LATTICE-MATCHED ZNSXSE1-X ON GAAS SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 311 - 317

[7] GROWTH OF ZNSXSE1-X BY MBE ON (100)GAAS SUBSTRATES - EFFECT OF LATTICE-MATCHING [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 41 - 45

[8] MATSUMURA N, IN PRESS J CRYSTAL G

[9] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[10] MOCVD GROWTH OF ZNSXSE1-X EPITAXIAL LAYERS LATTICE-MATCHED TO GAAS USING ALKYLS OF ZN, S AND SE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (11): : L864 - L866

[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &

[2] COMPARISON OF MOCVD-GROWN WITH CONVENTIONAL II-VI MATERIALS PARAMETERS FOR EL THIN-FILMS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1984, 81 (02): : 625 - 646

[3] ROLE OF EXPERIMENTAL RESOLUTION IN MEASUREMENTS OF CRITICAL LAYER THICKNESS FOR STRAINED-LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (14) : 1080 - 1081

[4] LATTICE-MISMATCH EFFECTS ON PROPERTIES IN ZNSE LAYER GROWN ON GAAS SUBSTRATE BY LOW-PRESSURE OMVPE [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 27 - 30

[5] HIBATA N, 1988, JPN J APPL PHYS, V27, pL441

[6] MBE GROWTH OF HIGH-QUALITY LATTICE-MATCHED ZNSXSE1-X ON GAAS SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 311 - 317

[7] GROWTH OF ZNSXSE1-X BY MBE ON (100)GAAS SUBSTRATES - EFFECT OF LATTICE-MATCHING [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 41 - 45

[8] MATSUMURA N, IN PRESS J CRYSTAL G

[9] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[10] MOCVD GROWTH OF ZNSXSE1-X EPITAXIAL LAYERS LATTICE-MATCHED TO GAAS USING ALKYLS OF ZN, S AND SE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (11): : L864 - L866