INFRARED FREE-ELECTRON LASER MEASUREMENT OF POWER LIMITING BY 2-PHOTON ABSORPTION IN INSB

被引：9

作者：

MURDIN, BN ^{[1
]}

MERVEILLE, C ^{[1
]}

KAR, AK ^{[1
]}

PIDGEON, CR ^{[1
]}

JAROSZYNSKI, DA ^{[1
]}

ORTEGA, JM ^{[1
]}

PRAZERES, R ^{[1
]}

GLOTIN, F ^{[1
]}

机构：

[1] UNIV PARIS 11,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1993年 / 25卷 / 03期

关键词：

D O I：

10.1007/BF00420762

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have performed the first experiment on the free-electron laser (CLIO) at the Laboratoire pour l'Utilisation du Rayonnement Electromagnetique (LURE). In a transmission experiment we observed strong power limiting at wavelengths longer than the absorption edge associated with induced free carrier absorption produced by direct interband two-photon transitions in InSb. We have estimated the two-photon absorption (TPA) coefficient (beta) of InSb at 8.9 mum to be 2 cm MW-1, by fitting the power-limiting effect with a simple theoretical model. An important feature of this result is that we are utilizing the broad tunability of the FEL to explore the TPA theory to shorter wavelengths than hitherto available with CO2 lasers. The result is in broad agreement with the longer-wavelength measurements of Sheik-Bahae et al.

引用

页码：171 / 175

页数：5

共 10 条

[1] OPTICAL LIMITING IN GAAS [J].

BOGGESS, TF ;

SMIRL, AL ;

MOSS, SC ;

BOYD, IW ;

VANSTRYLAND, EW .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (05) :488-494

[2]

HUTCHINGS DC, IN PRESS J OPT SOC A

[3] 2-PHOTON ABSORPTION IN ZINCBLENDE SEMICONDUCTORS [J].

PIDGEON, CR ;

WHERRETT, BS ;

JOHNSTON, AM ;

DEMPSEY, J ;

MILLER, A .

PHYSICAL REVIEW LETTERS, 1979, 42 (26) :1785-1788

[4] FREQUENCY-DEPENDENCE OF THE 2-PHOTON ABSORPTION-COEFFICIENT IN INSB - TUNNELING EFFECTS [J].

SHEIKBAHAE, M ;

ROSSI, T ;

KWOK, HS .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1987, 4 (12) :1964-1969

[5] MEASUREMENT OF NONDEGENERATE NONLINEARITIES USING A 2-COLOR Z-SCAN [J].

SHEIKBAHAE, M ;

WANG, J ;

DESALVO, R ;

HAGAN, DJ ;

VANSTRYLAND, EW .

OPTICS LETTERS, 1992, 17 (04) :258-260

[6] VERIFICATION OF THE SCALING RULE FOR 2-PHOTON ABSORPTION IN SEMICONDUCTORS [J].

VANSTRYLAND, EW ;

GUHA, S ;

VANHERZEELE, H ;

WOODALL, MA ;

SOILEAU, MJ ;

WHERRETT, BS .

OPTICA ACTA, 1986, 33 (04) :381-386

[7] 2 PHOTON-ABSORPTION, NONLINEAR REFRACTION, AND OPTICAL LIMITING IN SEMICONDUCTORS [J].

VANSTRYLAND, EW ;

VANHERZEELE, H ;

WOODALL, MA ;

SOILEAU, MJ ;

SMIRL, AL ;

GUHA, S ;

BOGGESS, TF .

OPTICAL ENGINEERING, 1985, 24 (04) :613-623

[8] ALL-OPTICAL POWER LIMITING OF CO2-LASER PULSES USING CASCADED OPTICAL BISTABLE ELEMENTS [J].

WALKER, AC ;

KAR, AK ;

JI, W ;

KELLER, U ;

SMITH, SD .

APPLIED PHYSICS LETTERS, 1986, 48 (11) :683-685

[9] NON-PARABOLICITY AND EXCITON EFFECTS IN 2-PHOTON ABSORPTION IN ZINCBLENDE SEMICONDUCTORS [J].

WEILER, MH .

SOLID STATE COMMUNICATIONS, 1981, 39 (08) :937-940

[10] SCALING RULES FOR MULTIPHOTON INTERBAND ABSORPTION IN SEMICONDUCTORS [J].

WHERRETT, BS .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1984, 1 (01) :67-72

← 1 →