INFRARED PHOTODETECTION USING A-SI-H PHOTODIODE

被引：25

作者：

OKAMURA, M

SUZUKI, S

机构：

[1] NTT Interdisciplinary Research Laboratories, Midori-cho, Musashino-shi

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 03期

关键词：

D O I：

10.1109/68.275503

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is experimentally demonstrated for the first time that an a-Si:H photodiode with reach-through structure can detect infrared light of 1.31 mum and 1.55 mum. A maximum gain-quantum efficiency product of 0.58 is obtained at a reverse bias of -10 V under 100 muW illumination at 1.31 mum. This value of gain-quantum efficiency product is comparable to the quantum efficiency of a non-gain-enhanced a-Si:H pin photodiode at visible wavelengths.

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收藏

页码：412 / 414

页数：3

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