CHARACTERIZATION OF EVAPORATED GOLD-INDIUM FILMS ON SEMICONDUCTORS

[1] Beatty R. P., 1969, Ohmic contacts to semiconductors, P324

[2] BRADY G, 1944, MATERIALS HDB, P308

[3] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS [J]. THIN SOLID FILMS, 1973, 17 (01) : 1 - 41

[4] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3578 - +

[5] Knight S., 1969, Ohmic contacts to semiconductors, P102

[6] METALLIC CONTACTS FOR GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1189 - +

[7] PICRAUX ST, 1974, APPLICATIONS ION BEA

[8] POWELL GW, 1964, T METALL SOC AIME, V230, P694

[9] SHUNK FA, 1969, CONSTITUTION BINAR S, P72

[10] EFFECT OF ALLOYING BEHAVIOR ON ELECTRICAL CHARACTERISTICS OF N-GAAS SCHOTTKY DIODES METALLIZED WITH W, AU, AND PT [J]. APPLIED PHYSICS LETTERS, 1973, 23 (12) : 666 - 668

[1] Beatty R. P., 1969, Ohmic contacts to semiconductors, P324

[2] BRADY G, 1944, MATERIALS HDB, P308

[3] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS [J]. THIN SOLID FILMS, 1973, 17 (01) : 1 - 41

[4] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3578 - +

[5] Knight S., 1969, Ohmic contacts to semiconductors, P102

[6] METALLIC CONTACTS FOR GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1189 - +

[7] PICRAUX ST, 1974, APPLICATIONS ION BEA

[8] POWELL GW, 1964, T METALL SOC AIME, V230, P694

[9] SHUNK FA, 1969, CONSTITUTION BINAR S, P72

[10] EFFECT OF ALLOYING BEHAVIOR ON ELECTRICAL CHARACTERISTICS OF N-GAAS SCHOTTKY DIODES METALLIZED WITH W, AU, AND PT [J]. APPLIED PHYSICS LETTERS, 1973, 23 (12) : 666 - 668