GROWTH TEMPERATURE-DEPENDENCE OF DISORDERINGS IN A BE-DOPED GAAS/ALAS MULTILAYERED STRUCTURE

被引:22
作者
KAMATA, N [1 ]
KOBAYASHI, K [1 ]
ENDO, K [1 ]
SUZUKI, T [1 ]
MISU, A [1 ]
机构
[1] SCI UNIV TOKYO,FAC SCI,DEPT PHYS,SHINJUKU KU,NODA,CHIBA 278,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 07期
关键词
D O I
10.1143/JJAP.26.1092
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1092 / 1096
页数:5
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