MERCURY CADMIUM TELLURIDE JUNCTIONS GROWN INSITU BY MOLECULAR-BEAM EPITAXY

被引：13

作者：

BOUKERCHE, M

YOO, S

SOU, IK

DESOUZA, M

FAURIE, JP

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.575519

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2623 / 2626

页数：4

共 8 条

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BOUKERCHE, M ;

SOU, IK ;

DESOUZA, M ;

YOO, SS ;

FAURIE, JP .

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[3] INDIUM DOPING OF HGCDTE LAYERS DURING GROWTH BY MOLECULAR-BEAM EPITAXY [J].

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SOU, IK ;

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FAURIE, JP .

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[5] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF 2-IN-DIAM HG1-XCDXTE FILMS ON GAAS (100) SUBSTRATES [J].

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CHU, X ;

FAURIE, JP .

APPLIED PHYSICS LETTERS, 1988, 52 (12) :978-980

[6]

REINE MB, 1981, SEMICONDUCTORS SEMIM, V18

[7] NEW ACHIEVEMENTS IN HG1-XCDXTE GROWN BY MOLECULAR-BEAM EPITAXY [J].

SIVANANTHAN, S ;

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MONFROY, G ;

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[8]

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