ABSOLUTE NOISE CHARACTERIZATION OF AVALANCHE PHOTO-DIODES

被引：8

作者：

BRAIN, MC

机构：

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 15期

关键词：

D O I：

10.1049/el:19780326

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：485 / 487

页数：3

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共 4 条

[1] VERY LOW-NOISE SILICON PLANAR AVALANCHE PHOTO-DIODES
GOEDBLOED, JJ
SMEETS, ETJM
[J]. ELECTRONICS LETTERS, 1978, 14 (03) : 67 - 69
[2] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES
MCINTYRE, RJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 164 - +
[3] CHARACTERIZATION OF AVALANCHE PHOTODIODES HAVING NEARLY-UNILATERAL CARRIER MULTIPLICATION
MOUTHAAN, K
SNOEREN, RM
[J]. ELECTRONICS LETTERS, 1974, 10 (08) : 118 - 120
[4] STATISTICS OF A GENERAL CLASS OF AVALANCHE DETECTORS WITH APPLICATIONS TO OPTICAL COMMUNICATION
PERSONICK, SD
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1971, 50 (10): : 3075 - +