VERY LOW-NOISE SILICON PLANAR AVALANCHE PHOTO-DIODES

被引：10

作者：

GOEDBLOED, JJ

SMEETS, ETJM

机构：

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 03期

关键词：

D O I：

10.1049/el:19780047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：67 / 69

页数：3

共 11 条

[1]

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (12) :1337-1343

[3] WAVELENGTH DEPENDENCE OF MULTIPLICATION NOISE IN SILICON AVALANCHE PHOTODIODES [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) :713-716

[4] MODEL FOR REACH-THROUGH AVALANCHE PHOTODIODES (RAPDS) [J].

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[5]

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KLEIMACK, JJ ;

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WIEGMANN, W ;

LOGAN, RA .

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[7] DISTRIBUTION OF GAINS IN UNIFORMLY MULTIPLYING AVALANCHE PHOTODIODES - THEORY [J].

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[8] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].

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[9]

SMEETS ETJ, 1977, SEP ESSDERC C BRIGHT

[10] MEASUREMENT OF IONIZATION RATES IN DIFFUSED SILICON P-N JUNCTIONS [J].

VANOVERSTRAETEN, R ;

DEMAN, H .

SOLID-STATE ELECTRONICS, 1970, 13 (05) :583-+

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