共 20 条
[11]
ATTENUATION LENGTH MEASUREMENTS OF HOT ELECTRONS IN METAL FILMS
[J].
PHYSICAL REVIEW,
1962, 127 (06)
:2006-&
[14]
PHOTO-LUMINESCENCE IN HEAVILY DOPED GAAS .2. HYDROSTATIC-PRESSURE DEPENDENCE
[J].
PHYSICAL REVIEW B,
1980, 22 (02)
:894-903
[15]
Rhoderick E.H., 1988, METAL SEMICONDUCTOR
[16]
EXPERIMENTAL RESULTS EXAMINING VARIOUS MODELS OF SCHOTTKY-BARRIER FORMATION ON GAAS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (04)
:1178-1183
[17]
CLEANING CHEMISTRY OF GAAS(100) AND INSB(100) SUBSTRATES FOR MOLECULAR-BEAM EPITAXY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1983, 1 (03)
:791-794
[18]
BAND BENDING AND INTERFACE STATES FOR METALS ON GAAS
[J].
APPLIED PHYSICS LETTERS,
1988, 52 (24)
:2052-2054
[19]
SCHOTTKY-BARRIER HEIGHT OF IDEAL METAL CONTACTS TO GAAS
[J].
APPLIED PHYSICS LETTERS,
1984, 44 (10)
:1002-1004
[20]
THE INTERACTION OF GOLD WITH GALLIUM-ARSENIDE
[J].
JOURNAL OF APPLIED PHYSICS,
1988, 64 (09)
:4618-4623