EPITAXIAL-GROWTH OF COSI2/SI STRUCTURES

Metal silicide films, which can be grown epitaxially on Si, have become of considerable interest both from an applied and a fundamental point of view. This is especially the case for CoSi2 because of its good electrical conductivity and high thermal stability. The Schottky barrier, which determines the electron transport over the interface, is the fundamental parameter characterizing a metal-semiconductor junction. A basic understanding of interface properties requires knowledge of the interface structure. Various growth techniques are used for the preparation of CoSi2/Si (100) and (111) structures, which include deposition techniques in ultra-high vacuum. The microstructure has been investigated in detail by transmission electron microscopy, which enables the study of interfaces and defects down to the atomic level. The atomic interface structure of both CoSi2/Si (100) and (111) structures is investigated by comparing experimental and simulated high-resolution electron microscopy images.