CASCADE MODEL FOR REDUCTION OF FIELD-EFFECT MOBILITY OF ELECTRONS IN LIGHTLY DOPED CHANNEL OF SUB-MICRON GATE SI THIN-FILM FIELD-EFFECT TRANSISTORS

被引：1

作者：

HATORI, F

ASADA, K

SUGANO, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 08期

关键词：

D O I：

10.1143/JJAP.28.1348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1348 / 1353

页数：6

共 10 条

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