POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS ON A NOVEL 800-DEGREES-C GLASS SUBSTRATE

被引：35

作者：

TROXELL, JR ^{[1
]}

HARRINGTON, MI ^{[1
]}

ERSKINE, JC ^{[1
]}

DUMBAUGH, WH ^{[1
]}

FEHLNER, FP ^{[1
]}

MILLER, RA ^{[1
]}

机构：

[1] CORNING GLASS WORKS,DIV RES & DEV,CORNING,NY 14831

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 11期

关键词：

D O I：

10.1109/EDL.1986.26486

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：597 / 599

页数：3

共 12 条

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[6] THIN-FILM TRANSISTORS ON MOLECULAR-BEAM-DEPOSITED POLYCRYSTALLINE SILICON [J].

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[8] CHARACTERIZATION OF POLYCRYSTALLINE SILICON MOS-TRANSISTORS AND ITS FILM PROPERTIES .1. [J].

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[9] NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN [J].

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[10]

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