THIN-FILM TRANSISTORS ON MOLECULAR-BEAM-DEPOSITED POLYCRYSTALLINE SILICON

被引：19

作者：

MATSUI, M ^{[1
]}

SHIRAKI, Y ^{[1
]}

MARUYAMA, E ^{[1
]}

OHWADA, J ^{[1
]}

机构：

[1] HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 06期

关键词：

D O I：

10.1063/1.333419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1590 / 1595

页数：6

共 16 条

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ELECTRONICS LETTERS, 1979, 15 (06) :179-181

[6] LOW-TEMPERATURE FORMATION OF POLYCRYSTALLINE SILICON FILMS BY MOLECULAR-BEAM DEPOSITION [J].

MATSUI, M ;

SHIRAKI, Y ;

MARUYAMA, E .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :995-998

[7] POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTORS ON GLASS [J].

MATSUI, M ;

SHIRAKI, Y ;

KATAYAMA, Y ;

KOBAYASHI, KLI ;

SHINTANI, A ;

MARUYAMA, E .

APPLIED PHYSICS LETTERS, 1980, 37 (10) :936-937

[8]

Matsui M., 1983, JPN J APPL PHYS S, V22-1, P497

[9]

MATSUI M, 1982, 14TH P C SOL STAT DE

[10]

NAKAGAWA K, 1982, 2ND INT S MOL BEAM E, P197

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