POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTORS ON GLASS

[1] 6 X 6-IN 20-LPI ELECTROLUMINESCENT DISPLAY PANEL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (09) : 739 - 748

[2] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[3] FIELD-EFFECTS IN POLYCRYSTALLINE-SILICON FILMS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (07) : 789 - &

[4] MOS FIELD-EFFECT TRANSISTOR FABRICATED ON A MOLECULAR-BEAM EPITAXIAL SILICON LAYER [J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 740 - 741

[5] LECORDIER C, 1979, ANN SOC ENTOMOL FR, V15, P179

[6] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 173 - 175

[7] TEXTURAL CHARACTERISTICS AND ELECTRICAL PROPERTIES OF VACUUM EVAPORATED SILICON FILMS [J]. VACUUM, 1965, 15 (07) : 359 - &

[8] STRUCTURES OF SI FILMS CHEMICALLY VAPOR-DEPOSITED ON AMORPHOUS SIO2 SUBSTRATES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (08) : 1105 - 1112

[9] Si Molecular Beam Epitaxy (n on n(+)) with Wide Range Doping Control [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) : 1795 - 1802

[10] ELECTRICAL CHARACTERISTICS OF ION IMPLANTED BORON LAYERS IN SILICON [J]. CANADIAN JOURNAL OF PHYSICS, 1970, 48 (02) : 229 - &

[1] 6 X 6-IN 20-LPI ELECTROLUMINESCENT DISPLAY PANEL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (09) : 739 - 748

[2] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[3] FIELD-EFFECTS IN POLYCRYSTALLINE-SILICON FILMS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (07) : 789 - &

[4] MOS FIELD-EFFECT TRANSISTOR FABRICATED ON A MOLECULAR-BEAM EPITAXIAL SILICON LAYER [J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 740 - 741

[5] LECORDIER C, 1979, ANN SOC ENTOMOL FR, V15, P179

[6] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 173 - 175

[7] TEXTURAL CHARACTERISTICS AND ELECTRICAL PROPERTIES OF VACUUM EVAPORATED SILICON FILMS [J]. VACUUM, 1965, 15 (07) : 359 - &

[8] STRUCTURES OF SI FILMS CHEMICALLY VAPOR-DEPOSITED ON AMORPHOUS SIO2 SUBSTRATES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (08) : 1105 - 1112

[9] Si Molecular Beam Epitaxy (n on n(+)) with Wide Range Doping Control [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) : 1795 - 1802

[10] ELECTRICAL CHARACTERISTICS OF ION IMPLANTED BORON LAYERS IN SILICON [J]. CANADIAN JOURNAL OF PHYSICS, 1970, 48 (02) : 229 - &