ELECTRICAL CHARACTERISTICS OF ION IMPLANTED BORON LAYERS IN SILICON

[1] MOS FIELD EFFECT TRANSISTORS FORMED BY GATE MASKED ION IMPLANTATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) : 757 - &

[2] ANNEALING BEHAVIOUR OF P-TYPE LAYERS FORMED BY ION-IMPLANTATION OF GALLIUM IN SILICON [J]. PHYSICS LETTERS A, 1969, A 28 (08) : 558 - &

[3] ION IMPLANTATION AS A PRODUCTION TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 10 - +

[4] NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1964, 135 (5A): : 1381 - +

[5] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J]. PHYSICAL REVIEW, 1965, 138 (2A): : A555 - &

[6] CORBETT JW, 1966, ELECTRON RADIATIO S7

[7] DAVIES PE, 1968, APPL PHYS LETT, V13, P243

[8] IMPLANTATION PROFILES OF 32P CHANNELED INTO SILICON CRYSTALS [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 587 - +

[9] ERIKSSON L, 1968, RADIATION EFFECTS SE, P398

[10] FREEMAN JH, 1967, P INT C APPL ION BEA, P75

[1] MOS FIELD EFFECT TRANSISTORS FORMED BY GATE MASKED ION IMPLANTATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) : 757 - &

[2] ANNEALING BEHAVIOUR OF P-TYPE LAYERS FORMED BY ION-IMPLANTATION OF GALLIUM IN SILICON [J]. PHYSICS LETTERS A, 1969, A 28 (08) : 558 - &

[3] ION IMPLANTATION AS A PRODUCTION TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 10 - +

[4] NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1964, 135 (5A): : 1381 - +

[5] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J]. PHYSICAL REVIEW, 1965, 138 (2A): : A555 - &

[6] CORBETT JW, 1966, ELECTRON RADIATIO S7

[7] DAVIES PE, 1968, APPL PHYS LETT, V13, P243

[8] IMPLANTATION PROFILES OF 32P CHANNELED INTO SILICON CRYSTALS [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 587 - +

[9] ERIKSSON L, 1968, RADIATION EFFECTS SE, P398

[10] FREEMAN JH, 1967, P INT C APPL ION BEA, P75