HIGH-TEMPERATURE CHARACTERIZATION OF THE GACL3/SIH4/H2 CHEMICAL VAPOR-DEPOSITION REACTION MIXTURE

被引：1

作者：

ALFANO, AJ ^{[1
]}

BENARD, DJ ^{[1
]}

机构：

[1] ROCKWELL INT SCI CTR, THOUSAND OAKS, CA 91360 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 05期

关键词：

D O I：

10.1063/1.353085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The GaCl3/SiH4/H2 system is of interest for the production of high quality epitaxial gallium doped silicon. A thermodynamic analysis and spectroscopic investigation of this chemical vapor deposition (CVD) chemistry is described over the temperature range 800-1200 K. GaCl is identified as the major gallium transport species once the flowing reaction mixture reaches gas

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页码：2530 / 2534

页数：5

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