PHOTOLITHOGRAPHY SYSTEM USING A COMBINATION OF MODIFIED ILLUMINATION AND PHASE-SHIFT MASK

被引：11

作者：

KAMON, K ^{[1
]}

MIYAMOTO, T ^{[1
]}

MYOI, Y ^{[1
]}

NAGATA, H ^{[1
]}

KOTANI, N ^{[1
]}

TANAKA, M ^{[1
]}

机构：

[1] MITSUBISHI ELECTR CO,MFG DEV LAB,AMAGASAKI,HYOGO 661,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 12B期

关键词：

LSI; PHOTOLITHOGRAPHY; ANNULAR ILLUMINATION; MODIFIED ILLUMINATION; RESOLUTION; DEPTH OF FOCUS; PHOENIX; PHALCOM; PHASE SHIFT MASK;

D O I：

10.1143/JJAP.31.4131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Various methods have been developed to overcome the limitations in photolithography. Modified illumination and phase shift mask technologies have been developed in order to improve the depth of focus and resolution limit. We have combined these two methods and applied them to the step and repeat exposure system. Experiments using the modified illumination were carried out and subhalf-micron patterns were produced. The process latitude of 64M dynamic random access memory (DRAM) is doubled by this combination process.

引用

页码：4131 / 4136

页数：6

共 5 条

[1]

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[2]

HORI T, 1953, KOUGAKU, V2, P180

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KAMON, K ;

MIYAMOTO, T ;

MYOI, Y ;

NAGATA, H ;

TANAKA, M ;

HORIE, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11B) :3021-3029

[4] IMPROVING RESOLUTION IN PHOTOLITHOGRAPHY WITH A PHASE-SHIFTING MASK [J].

LEVENSON, MD ;

VISWANATHAN, NS ;

SIMPSON, RA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) :1828-1836

[5]

Yeung M. S, 1986, P KOD MICR SEM INTER P KOD MICR SEM INTER, P115

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