NEW STARTING MATERIALS FOR MOMBE

被引:9
作者
WEYERS, M [1 ]
机构
[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,W-5100 AACHEN,GERMANY
关键词
D O I
10.1016/0022-0248(91)90596-W
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
This paper reviews our knowledge on standard and alternative precursors for use in MOMBE (metalorganic molecular beam epitaxy). It first deals with replacements for the group V hydrides, which is attractive from a safety point of view. So far the results obtained with completely or partially substituted hydrides do not match those observed with AsH3 and PH3. However, for the monosubstituted arsines precracking is unnecessary. Important advantages are offered by the use of coordinatively saturated group III compounds. This way oxygen may be suppressed or avoided altogether, which is important for the preparation of Al-containing films. In addition, the approach using saturated sources may be extended to starting materials not containing metal-bonded carbon. Thereby the danger of carbon incorporation into the layers may be reduced. Based on the insights in the deposition process a number of requirements for optimized precursors is formulated.
引用
收藏
页码:1021 / 1029
页数:9
相关论文
共 45 条
[41]   GROWTH OF HIGH-QUALITY GAXIN1-XASYP1-Y BY CHEMICAL BEAM EPITAXY [J].
TSANG, WT ;
SCHUBERT, EF ;
CHIU, TH ;
CUNNINGHAM, JE ;
BURKHARDT, EG ;
DITZENBERGER, JA ;
AGYEKUM, E .
APPLIED PHYSICS LETTERS, 1987, 51 (10) :761-763
[42]   PARAMETRIC STUDIES OF GAAS GROWTH BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].
VODJDANI, N ;
LEMARCHAND, A ;
PARADAN, H .
JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :339-349
[43]   GASEOUS DOPANT SOURCES IN MOMBE/CBE [J].
WEYERS, M ;
MUSOLF, J ;
MARX, D ;
KOHL, A ;
BALK, P .
JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) :383-392
[44]   P+-ALINAS/INP JUNCTION FETS BY SELECTIVE MOLECULAR-BEAM EPITAXY [J].
WOODHOUSE, JD ;
DONNELLY, JP ;
MANFRA, MJ ;
BAILEY, RJ .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) :601-603
[45]   LASER-ASSISTED MOMBE GROWTH OF GAAS USING TRI-ISOBUTYL GALLIUM [J].
YAMADA, T ;
IGA, R ;
SUGIURA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11) :L1883-L1885