P+-ALINAS/INP JUNCTION FETS BY SELECTIVE MOLECULAR-BEAM EPITAXY

被引：1

作者：

WOODHOUSE, JD

DONNELLY, JP

MANFRA, MJ

BAILEY, RJ

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 11期

关键词：

D O I：

10.1109/55.9289

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：601 / 603

页数：3

共 13 条

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[3]

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[4]

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IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) :53-54

[8] A LOW-POWER HIGH-SPEED ION-IMPLANTED JFET FOR INP-BASED MONOLITHIC OPTOELECTRONIC ICS [J].

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IEEE ELECTRON DEVICE LETTERS, 1987, 8 (11) :518-520

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[10] INDIRECT PLASMA DEPOSITION OF SILICON DIOXIDE [J].

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