INXAL1-XAS/INP HETEROJUNCTION INSULATED GATE FIELD-EFFECT TRANSISTORS (HIGFETS)

被引：14

作者：

HANSON, CM ^{[1
]}

CHU, P ^{[1
]}

WIEDER, HH ^{[1
]}

CLAWSON, AR ^{[1
]}

机构：

[1] USN,CTR OCEAN SYST,CODE 561,SAN DIEGO,CA 92152

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 02期

关键词：

D O I：

10.1109/EDL.1987.26549

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：53 / 54

页数：2

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