SELF-ALIGNED DIFFUSION TECHNIQUE FOR N-INP JFETS

被引：3

作者：

FAN, C

YU, PKL

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 19期

关键词：

D O I：

10.1049/el:19870689

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：981 / 982

页数：2

共 9 条

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APPLIED PHYSICS LETTERS, 1986, 49 (06) :340-341

[6] SUBSTRATE DEPENDENCE OF INP MESFET PERFORMANCE [J].

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ELECTRONICS LETTERS, 1978, 14 (22) :715-716

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ELECTRONICS LETTERS, 1985, 21 (10) :449-451

[8] GAINAS JUNCTION FET WITH INP BUFFER LAYER PREPARED BY SELECTIVE ION-IMPLANTATION OF BE AND RAPID THERMAL ANNEALING [J].

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ELECTRONICS LETTERS, 1986, 22 (06) :313-315

[9] INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS UTILIZING AN AMORPHOUS PHOSPHORUS GATE INSULATOR [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) :931-932

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