INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS UTILIZING AN AMORPHOUS PHOSPHORUS GATE INSULATOR

被引：1

作者：

SERREZE, HB

SCHACHTER, R

OLEGO, DJ

VISCOGLIOSI, M

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 04期

关键词：

D O I：

10.1109/T-ED.1987.23018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：931 / 932

页数：2

共 18 条

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[6] THE EFFECT OF INTERFACIAL TRAPS ON THE STABILITY OF INSULATED GATE DEVICES ON INP [J].

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[7] ELECTRICAL-PROPERTIES OF AL2O3 AND A1PXOY DIELECTRIC LAYERS ON INP [J].

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[8] PHOTOLUMINESCENCE AND RAMAN-SCATTERING INVESTIGATIONS OF IMPLANTED AND THERMALLY ANNEALED INP [J].

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[9]

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[10] CHANNEL MOBILITY ENHANCEMENT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

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