PHOTOLUMINESCENCE AND RAMAN-SCATTERING INVESTIGATIONS OF IMPLANTED AND THERMALLY ANNEALED INP

被引：7

作者：

OLEGO, DJ

SERREZE, HB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 05期

关键词：

D O I：

10.1063/1.336005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1979 / 1981

页数：3

共 16 条

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RON, A .

APPLIED PHYSICS LETTERS, 1984, 44 (06) :609-610

[7] LUMINESCENCE STUDY OF RAPID LAMP ANNEALING OF SI-IMPLANTED INP [J].

KIRILLOV, D ;

MERZ, JL ;

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SHATAS, S .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :531-536

[8]

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[9] OPTICAL TECHNIQUES FOR IMPLANT PROCESS DIAGNOSIS IN GAP [J].

MYERS, DR ;

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[10]

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