LUMINESCENCE STUDY OF RAPID LAMP ANNEALING OF SI-IMPLANTED INP

被引：15

作者：

KIRILLOV, D

MERZ, JL

KALISH, R

SHATAS, S

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

[2] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,HAIFA,ISRAEL

[3] AG ASSOCIATES,PALO ALTO,CA 94303

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.334787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：531 / 536

页数：6

共 11 条

[1] INCORPORATION OF SI IN LIQUID-PHASE EPITAXIAL INP LAYERS [J].

BAUMANN, GG ;

BENZ, KW ;

PILKUHN, MH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) :1232-1235

[2] EFFECT OF HIGH DOPING ON THE PHOTO-LUMINESCENCE EDGE OF GAAS AND INP [J].

BENDAPUDI, S ;

BOSE, DN .

APPLIED PHYSICS LETTERS, 1983, 42 (03) :287-289

[3]

CHOUDHURY ANMM, 1983, APPL PHYS LETT, V43, P381, DOI 10.1063/1.94351

[4]

DESHENG J, 1982, J APPL PHYS, V53, P999

[5] LIQUID-PHASE EPITAXIALLY EFFICIENT VISIBLE EMISSION FROM HIGHLY DOPED LIQUID-PHASE EPITAXIALLY GROWN INP [J].

HAWRYLO, FZ .

APPLIED PHYSICS LETTERS, 1980, 37 (11) :1038-1039

[6] BAND-TO-BAND LUMINESCENCE OF ION-IMPLANTED INP AFTER RAPID LAMP ANNEALING [J].

KIRILLOV, D ;

MERZ, JL ;

KALISH, R ;

RON, A .

APPLIED PHYSICS LETTERS, 1984, 44 (06) :609-610

[7]

Kirillov D., 1984, Energy Beam-Solid Interactions and Transient Thermal Processing Symposium, P707

[8]

Lorenzo J. P., 1983, Laser-Solid Interactions and Transient Thermal Processing of Materials, P683

[9]

NEGRESKUL VV, 1975, SOV PHYS SEMICOND+, V9, P587

[10]

PICKERING C, 1982, I PHYS C SER, V65, P469

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