NANOMETER-SCALE MODIFICATION OF THE TRIBOLOGICAL PROPERTIES OF SI(100) BY SCANNING FORCE MICROSCOPE

被引:26
作者
TEUSCHLER, T
MAHR, K
MIYAZAKI, S
HUNDHAUSEN, M
LEY, L
机构
[1] Institut für Technische Physik, Universität Erlangen‐Nürnberg, D-91058, Erlangen
关键词
D O I
10.1063/1.113146
中图分类号
O59 [应用物理学];
学科分类号
摘要
Hydrogen‐terminated Si(100) surfaces were patterned on the nanometer scale using a conducting‐probe scanning force microscope (SFM) operating in air ambient. To generate the nanostructures, negative voltages were applied to the conductive SFM tip with respect to the sample while scanning in contact mode. After structuring, the same SFM tip was used to measure simultaneously the sample topography and the friction force between tip and sample. An increase in height by about three nanometers resulting from field‐enhanced oxidation is observed in areas where the tip had been negatively biased with constant voltages above 7 V. The topographical change is accompanied by a relative increase of the friction force of about 20% over the structured areas. © 1995, American Institute of Physics. All rights reserved.
引用
收藏
页码:2499 / 2501
页数:3
相关论文
共 30 条
[1]   SURFACE MODIFICATION WITH THE SCANNING TUNNELING MICROSCOPE [J].
ABRAHAM, DW ;
MAMIN, HJ ;
GANZ, E ;
CLARKE, J .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1986, 30 (05) :492-499
[2]   NORMAL AND LATERAL FORCES IN SCANNING FORCE MICROSCOPY [J].
ASCOLI, C ;
DINELLI, F ;
FREDIANI, C ;
PETRACCHI, D ;
SALERNO, M ;
LABARDI, M ;
ALLEGRINI, M ;
FUSO, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (03) :1642-1645
[3]   CHARGE STORAGE IN A NITRIDE-OXIDE-SILICON MEDIUM BY SCANNING CAPACITANCE MICROSCOPY [J].
BARRETT, RC ;
QUATE, CF .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) :2725-2733
[4]   ATOMIC-SCALE SURFACE MODIFICATIONS USING A TUNNELING MICROSCOPE [J].
BECKER, RS ;
GOLOVCHENKO, JA ;
SWARTZENTRUBER, BS .
NATURE, 1987, 325 (6103) :419-421
[5]   MODIFICATION OF HYDROGEN-PASSIVATED SILICON BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR [J].
DAGATA, JA ;
SCHNEIR, J ;
HARARY, HH ;
EVANS, CJ ;
POSTEK, MT ;
BENNETT, J .
APPLIED PHYSICS LETTERS, 1990, 56 (20) :2001-2003
[6]   SELECTIVE AREA OXIDATION OF SILICON WITH A SCANNING FORCE MICROSCOPE [J].
DAY, HC ;
ALLEE, DR .
APPLIED PHYSICS LETTERS, 1993, 62 (21) :2691-2693
[7]   THE INFLUENCE OF LATERAL FORCES IN SCANNING FORCE MICROSCOPY [J].
DENBOEF, AJ .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1991, 62 (01) :88-92
[8]   DIRECT WRITING OF 10-NM FEATURES WITH THE SCANNING TUNNELING MICROSCOPE [J].
EHRICHS, EE ;
YOON, S ;
DELOZANNE, AL .
APPLIED PHYSICS LETTERS, 1988, 53 (23) :2287-2289
[9]   WRITING ELECTRONIC NANOMETER STRUCTURES INTO POROUS SI FILMS BY SCANNING-TUNNELING-MICROSCOPY [J].
ENACHESCU, M ;
HARTMANN, E ;
KOCH, F .
APPLIED PHYSICS LETTERS, 1994, 64 (17) :2253-2255
[10]  
FUJIHIRA M, 1994, J VAC SCI TECHNOL B, V12, P1861