QUANTITATIVE MEASUREMENT OF IMPURITIES IN GALLIUM-ARSENIDE

被引：14

作者：

CLEGG, JB

GRAINGER, F

GALE, IG

机构：

来源：

JOURNAL OF MATERIALS SCIENCE | 1980年 / 15卷 / 03期

关键词：

D O I：

10.1007/BF00551742

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：747 / 750

页数：4

共 11 条

[1] CONCENTRATIONS OF CARBON AND OXYGEN IN INDIUM-PHOSPHIDE AND GALLIUM-ARSENIDE CRYSTALS GROWN BY LEC TECHNIQUE [J].

BLACKMORE, GW ;

CLEGG, JB ;

HISLOP, JS ;

MULLIN, JB .

JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) :401-413

[2] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE [J].

BROZEL, MR ;

CLEGG, JB ;

NEWMAN, RC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) :1331-1339

[3] DIRECT ANALYSIS OF THIN LAYERS BY SPARK SOURCE MASS SPECTROGRAPHY [J].

CLEGG, JB ;

MILLETT, EJ ;

ROBERTS, JA .

ANALYTICAL CHEMISTRY, 1970, 42 (07) :713-+

[4] DETERMINATION OF OXYGEN IN SEMICONDUCTOR MATERIALS WITH A CRYOGENICALLY PUMPED SPARK-SOURCE MASS-SPECTROMETER [J].

CLEGG, JB ;

GALE, IG ;

MILLETT, EJ .

ANALYST, 1973, 98 (1162) :69-74

[5] DIRECT ANALYSIS OF SOLID CADMIUM MERCURY TELLURIDE BY FLAMELESS ATOMIC-ABSORPTION USING INTERACTIVE COMPUTER-PROCESSING [J].

GRAINGER, F ;

GALE, IG .

JOURNAL OF MATERIALS SCIENCE, 1979, 14 (06) :1370-1374

[6]

HOLLAN L, 1972, ACTA ELECTRON, V15, P11

[7]

JOYCE BA, 1977, I PHYS C SER, V32, P17

[8] STRENGTH OF INFRARED-ABSORPTION FROM SILICON DONORS AND SILICON ACCEPTORS IN GALLIUM-ARSENIDE [J].

LAITHWAITE, K ;

NEWMAN, RC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (24) :4503-4510

[9]

WOLFE CM, 1968, 2 P INT S DALL, P43

[10]

WOLFE CM, 1970, J ELECTROCHEM SOC, V17, P129

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