METHOD OF DETECTING FINE-STRUCTURE IN SECONDARY-ELECTRON EMISSION YIELD AND APPLICATION TO SI(111)

被引：26

作者：

GOTO, K

ISHIKAWA, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 04期

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D O I：

10.1063/1.1661361

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：1559 / +

页数：1

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