PROPERTIES OF SILICON-NITRIDE THIN-FILMS OBTAINED BY REACTIVE SPUTTERING

被引：11

作者：

POSADOWSKI, W

机构：

来源：

THIN SOLID FILMS | 1980年 / 69卷 / 02期

关键词：

D O I：

10.1016/0040-6090(80)90030-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：149 / 155

页数：7

共 11 条

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BARNES, CR ;

GEESNER, CR .

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[2] SOME PHYSICAL PROPERTIES OF SI-SI3N4 INTERFACES AND SILICON NITRIDE THIN FILMS PREPARED BY REACTIVE SPUTTERING IN NITROGEN [J].

CERVENAK, J ;

ALEKSANDROV, LN ;

LOVJAGIN, RN ;

KRIVOROTOV, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (06) :938-+

[3]

CHANDARI PK, 1973, J ELECTROCHEM SOC, V120, P991

[4] EVIDENCE OF EXCESS SILICON IN REACTIVELY SPUTTERED SILICON NITRIDE FILMS [J].

CORDES, LF .

APPLIED PHYSICS LETTERS, 1967, 11 (12) :383-&

[5] SILICON NITRIDE FILMS BY REACTIVE SPUTTERING [J].

HU, SM ;

GREGOR, LV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) :826-+

[6]

JOYCE RJ, 1968, THIN SOLID FILMS, V1, P481

[7]

MILEK I, 1971, HDB ELECTRONIC MATER, V3

[8]

MIRCH S, 1974, PHYS STATUS SOLIDI A, V26, P579

[9]

TICHOV SW, 1974, INORG MATER USSR, V10, P1460

[10] REVIEW OF INFRARED SPECTROSCOPIC STUDIES OF VAPOR-DEPOSITED DIELECTRIC GLASS-FILMS ON SILICON [J].

WONG, J .

JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (02) :113-160

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