2-DIMENSIONAL CONTACT-TYPE IMAGE SENSOR USING AMORPHOUS-SILICON PHOTO-TRANSISTOR

被引:15
作者
YAMAGUCHI, M
KANEKO, Y
TSUTSUI, K
机构
[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期
关键词
2-DIMENSIONAL IMAGE SENSORS; CONTACT-TYPE IMAGE SENSORS; AMORPHOUS SILICON; PHOTO-TRANSISTORS; THIN-FILM TRANSISTORS; SPLIT-GATE ELECTRODES; CHARGE STORAGE MODE; LARGE-AREA SENSORS;
D O I
10.1143/JJAP.32.458
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose a novel two-dimensional contact-type image sensor using amorphous silicon photo-transistors (APTs) in order to form a compact image scanner. Each pixel of the sensor consists of an APT, a storage capacitor, and an amorphous silicon thin-film transistor (a-Si TFT). We have made a prototype 140 X 240-pixel sensor with a pixel size of 160 mum square. It is confirmed that the prototype APT sensor can detect an image under room light. Exposure for gray scale images is in the range of 10(-1) to 7 lx-s. This TFT-switched, two-dimensional contact-type image sensor is promising for large-area applications because the process for APTs is fully compatible with that for conventional a-Si TFTs.
引用
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页码:458 / 461
页数:4
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