AMORPHOUS-SILICON PHOTOTRANSISTORS

被引：50

作者：

KANEKO, Y

KOIKE, N

TSUTSUI, K

TSUKADA, T

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 07期

关键词：

D O I：

10.1063/1.102726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An amorphous silicon field-effect phototransistor is fabricated using a processing technology compatible with conventional amorphous silicon-silicon nitride thin-film transistors. The phototransistor has an offset structure between the source and gate electrodes, where light is absorbed to produce a photocurrent. In an electron accumulation mode, the photocurrent is greater than the dark current by three orders of magnitude. In addition, the phototransistor is found to have output characteristics showing good saturation. Typical photoconductive gain of this saturation current is 17.

引用

页码：650 / 652

页数：3

共 6 条

[1]

CREDELL TL, 1988, 1988 P INT DISPL RES, P208

[2] HIGHLY PHOTOSENSITIVE TRANSISTORS IN SINGLE-CRYSTAL SILICON THIN-FILMS ON FUSED-SILICA [J].