ON THE STRUCTURE OF DANGLING BOND DEFECTS IN SILICON

被引：17

作者：

STUTZMANN, M

机构：

来源：

ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE NEUE FOLGE | 1987年 / 151卷

关键词：

D O I：

10.1524/zpch.1987.151.Part_1_2.211

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：211 / 222

页数：12

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