VOLTAGE-CONTROLLED PHOTOETCHING OF GAAS

被引：25

作者：

HOFFMANN, HJ

WOODALL, JM

CHAPPELL, TI

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 07期

关键词：

D O I：

10.1063/1.92414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：564 / 566

页数：3

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