ELECTROCHEMICAL SECTIONING AND SURFACE FINISHING OF GAAS AND GASB

[1] FABRICATION OF HIGH PRECISION NOZZLES BY ANISOTROPIC ETCHING OF (100) SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : 1321 - 1327

[2] DETECTION OF STRUCTURAL DEFECTS IN GAAS BY ELECTROCHEMICAL ETCHING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 621 - 629

[3] UBER DEN MECHANISMUS DER ANODISCHEN AUFLOSUNG VON GALLIUMARSENID [J]. BERICHTE DER BUNSEN-GESELLSCHAFT FUR PHYSIKALISCHE CHEMIE, 1965, 69 (07): : 578 - +

[4] GERISCHER H, 1966, J ELECTROCHEM SOC, V113, P1174

[5] ON ROLE OF ELECTRONS AND HOLES IN SURFACE REACTIONS ON SEMICONDUCTORS [J]. SURFACE SCIENCE, 1969, 13 (01) : 265 - +

[6] Jacquet P. A, 1956, METALL REV, V1, P157

[7] LAW JT, 1971, SOLID STATE TECHNOL, V14, P25

[8] Levitch V.G., 1962, PHYSICOCHEMICAL HYDR

[9] ANODIC OXIDATION AS SECTIONING TECHNIQUE FOR ANALYSIS OF IMPURITY CONCENTRATION PROFILES IN SILICON [J]. THIN SOLID FILMS, 1971, 8 (05) : 359 - &

[10] MOSS RL, UNPUBLISHED

[1] FABRICATION OF HIGH PRECISION NOZZLES BY ANISOTROPIC ETCHING OF (100) SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : 1321 - 1327

[2] DETECTION OF STRUCTURAL DEFECTS IN GAAS BY ELECTROCHEMICAL ETCHING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 621 - 629

[3] UBER DEN MECHANISMUS DER ANODISCHEN AUFLOSUNG VON GALLIUMARSENID [J]. BERICHTE DER BUNSEN-GESELLSCHAFT FUR PHYSIKALISCHE CHEMIE, 1965, 69 (07): : 578 - +

[4] GERISCHER H, 1966, J ELECTROCHEM SOC, V113, P1174

[5] ON ROLE OF ELECTRONS AND HOLES IN SURFACE REACTIONS ON SEMICONDUCTORS [J]. SURFACE SCIENCE, 1969, 13 (01) : 265 - +

[6] Jacquet P. A, 1956, METALL REV, V1, P157

[7] LAW JT, 1971, SOLID STATE TECHNOL, V14, P25

[8] Levitch V.G., 1962, PHYSICOCHEMICAL HYDR

[9] ANODIC OXIDATION AS SECTIONING TECHNIQUE FOR ANALYSIS OF IMPURITY CONCENTRATION PROFILES IN SILICON [J]. THIN SOLID FILMS, 1971, 8 (05) : 359 - &

[10] MOSS RL, UNPUBLISHED