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FABRICATION OF HIGH PRECISION NOZZLES BY ANISOTROPIC ETCHING OF (100) SILICON
被引:55
作者
:
BASSOUS, E
论文数:
0
引用数:
0
h-index:
0
BASSOUS, E
BARAN, EF
论文数:
0
引用数:
0
h-index:
0
BARAN, EF
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1978年
/ 125卷
/ 08期
关键词
:
D O I
:
10.1149/1.2131671
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1321 / 1327
页数:7
相关论文
共 20 条
[1]
INK JET PRINTING NOZZLE ARRAYS ETCHED IN SILICON
[J].
BASSOUS, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
BASSOUS, E
;
TAUB, HH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TAUB, HH
;
KUHN, L
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
KUHN, L
.
APPLIED PHYSICS LETTERS,
1977,
31
(02)
:135
-137
[2]
BASSOUS E, 1977, OCT EL SOC M ATL
[3]
BASSOUS E, 1977, Patent No. 4007464
[4]
ETHYLENE DIAMINE-PYROCATECHOL-WATER MIXTURE SHOWS ETCHING ANOMALY IN BORON-DOPED SILICON
[J].
BOHG, A
论文数:
0
引用数:
0
h-index:
0
BOHG, A
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(02)
:401
-&
[5]
OPTIMIZATION OF HYDRAZINE-WATER SOLUTION FOR ANISOTROPIC ETCHING OF SILICON IN INTEGRATED-CIRCUIT TECHNOLOGY
[J].
DECLERCQ, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
DECLERCQ, MJ
;
GERZBERG, L
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
GERZBERG, L
;
MEINDL, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
MEINDL, JD
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(04)
:545
-552
[6]
NEW C-MOS TECHNOLOGY USING ANISOTROPIC ETCHING OF SILICON
[J].
DECLERCQ, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
DECLERCQ, MJ
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1975,
10
(04)
:191
-197
[7]
A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON
[J].
FINNE, RM
论文数:
0
引用数:
0
h-index:
0
FINNE, RM
;
KLEIN, DL
论文数:
0
引用数:
0
h-index:
0
KLEIN, DL
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(09)
:965
-&
[8]
ETHYLENE DIAMINE-CATECHOL-WATER MIXTURE SHOWS PREFERENTIAL ETCHING OF P-N JUNCTION
[J].
GREENWOOD, JC
论文数:
0
引用数:
0
h-index:
0
机构:
Standard Telecommunication Laboratories, Harlow, Essex
GREENWOOD, JC
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(09)
:1325
-+
[9]
INK JET PRINTING
[J].
KAMPHOEFNER, FJ
论文数:
0
引用数:
0
h-index:
0
KAMPHOEFNER, FJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(04)
:584
-+
[10]
ETCHING VERY NARROW GROOVES IN SILICON
[J].
KENDALL, DL
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTR INC,DALLAS,TX 75222
TEXAS INSTR INC,DALLAS,TX 75222
KENDALL, DL
.
APPLIED PHYSICS LETTERS,
1975,
26
(04)
:195
-198
←
1
2
→
共 20 条
[1]
INK JET PRINTING NOZZLE ARRAYS ETCHED IN SILICON
[J].
BASSOUS, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
BASSOUS, E
;
TAUB, HH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TAUB, HH
;
KUHN, L
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
KUHN, L
.
APPLIED PHYSICS LETTERS,
1977,
31
(02)
:135
-137
[2]
BASSOUS E, 1977, OCT EL SOC M ATL
[3]
BASSOUS E, 1977, Patent No. 4007464
[4]
ETHYLENE DIAMINE-PYROCATECHOL-WATER MIXTURE SHOWS ETCHING ANOMALY IN BORON-DOPED SILICON
[J].
BOHG, A
论文数:
0
引用数:
0
h-index:
0
BOHG, A
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(02)
:401
-&
[5]
OPTIMIZATION OF HYDRAZINE-WATER SOLUTION FOR ANISOTROPIC ETCHING OF SILICON IN INTEGRATED-CIRCUIT TECHNOLOGY
[J].
DECLERCQ, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
DECLERCQ, MJ
;
GERZBERG, L
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
GERZBERG, L
;
MEINDL, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
MEINDL, JD
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(04)
:545
-552
[6]
NEW C-MOS TECHNOLOGY USING ANISOTROPIC ETCHING OF SILICON
[J].
DECLERCQ, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
DECLERCQ, MJ
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1975,
10
(04)
:191
-197
[7]
A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON
[J].
FINNE, RM
论文数:
0
引用数:
0
h-index:
0
FINNE, RM
;
KLEIN, DL
论文数:
0
引用数:
0
h-index:
0
KLEIN, DL
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(09)
:965
-&
[8]
ETHYLENE DIAMINE-CATECHOL-WATER MIXTURE SHOWS PREFERENTIAL ETCHING OF P-N JUNCTION
[J].
GREENWOOD, JC
论文数:
0
引用数:
0
h-index:
0
机构:
Standard Telecommunication Laboratories, Harlow, Essex
GREENWOOD, JC
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(09)
:1325
-+
[9]
INK JET PRINTING
[J].
KAMPHOEFNER, FJ
论文数:
0
引用数:
0
h-index:
0
KAMPHOEFNER, FJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(04)
:584
-+
[10]
ETCHING VERY NARROW GROOVES IN SILICON
[J].
KENDALL, DL
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTR INC,DALLAS,TX 75222
TEXAS INSTR INC,DALLAS,TX 75222
KENDALL, DL
.
APPLIED PHYSICS LETTERS,
1975,
26
(04)
:195
-198
←
1
2
→