CORRELATION BETWEEN ETCH CHARACTERISTICS OF GAAS ETCH SOLUTIONS CONTAINING H2O2 AND SURFACE-FILM CHARACTERISTICS

被引：20

作者：

KOHN, E

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 02期

关键词：

D O I：

10.1149/1.2129695

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：505 / 508

页数：4

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共 11 条

[1] GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS
ADAMS, AC
PRUNIAUX, BR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) : 408 - 414
[2] CHANG CC, 1977, 4TH ANN C PHYS COMP
[3] ELLIPSOMETRY OF ANODIC OXIDE FILMS ON GAAS
DELLOCA, CJ
YAN, G
YOUNG, L
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 89 - &
[4] CHEMICAL ETCHANT FOR SELECTIVE REMOVAL OF GAAS THROUGH SIO2 MASKS
GANNON, JJ
NUESE, CJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) : 1215 - 1219
[5] JIDA S, 1971, J ELECTROCHEM SOC, V118, P768
[6] NEW ETCHING SOLUTION SYSTEM, H3PO4-H2O2-H2O, FOR GAAS AND ITS KINETICS
MORI, Y
WATANABE, N
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1510 - 1514
[7] STUDIES ON CHEMICALLY ETCHED SILICON, GALLIUM-ARSENIDE, AND GALLIUM-PHOSPHIDE SURFACES BY AUGER-ELECTRON SPECTROSCOPY
ODA, T
SUGANO, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (07) : 1317 - 1327
[8] PREFERENTIAL ETCHING OF GAAS THROUGH PHOTORESIST MASKS
OTSUBO, M
ODA, T
KUMABE, H
MIKI, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 676 - 680
[9] PRELIMINARY RESULTS ON OXIDATION OF GAAS AND GAP DURING CHEMICAL ETCHING
SCHWARTZ, B
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 657 - &
[10] ENHANCE GAAS ETCH RATES NEAR EDGES OF A PROTECTIVE MASK
SHAW, DW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (09) : 958 - &