STUDIES ON CHEMICALLY ETCHED SILICON, GALLIUM-ARSENIDE, AND GALLIUM-PHOSPHIDE SURFACES BY AUGER-ELECTRON SPECTROSCOPY

被引：33

作者：

ODA, T ^{[1
]}

SUGANO, T ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 07期

关键词：

D O I：

10.1143/JJAP.15.1317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1317 / 1327

页数：11

共 14 条

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