MOSSBAUER STUDY OF THE AMORPHOUS LAYER IN ION-IMPLANTED DIAMOND

被引：9

作者：

VANROSSUM, M

LANGOUCHE, G

DEBRUYN, J

DEPOTTER, M

COUSSEMENT, R

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1981年 / 182卷 / APR期

关键词：

Compendex;

D O I：

10.1016/0029-554X(81)90714-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

SEMICONDUCTING DIAMONDS

引用

收藏

页码：407 / 411

页数：5

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