SURFACE METALLIZATION OF SILICON BY POTASSIUM ADSORPTION ON SI(001)-(2X1)

被引：78

作者：

CIRACI, S ^{[1
]}

BATRA, IP ^{[1
]}

机构：

[1] IBM CORP, ALMADEN RES CTR, SAN JOSE, CA 95120 USA

来源：

关键词：

D O I：

10.1103/PhysRevB.37.2955

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2955 / 2967

页数：13

共 74 条

[1] ABRAHAM FF, 1985, SURF SCI, V163, pL752, DOI 10.1016/0039-6028(85)91055-6
[2] MONOLAYER K-FILMS ON NI(100) .2. ELECTRONIC EXCITATIONS
ANDERSSON, S
JOSTELL, U
[J]. SOLID STATE COMMUNICATIONS, 1973, 13 (07) : 833 - 836
[3] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS
ANDO, T
FOWLER, AB
STERN, F
[J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672
[4] MEASUREMENT OF OVERLAYER-PLASMON DISPERSION IN K-CHAINS ADSORBED ON SI(001)2X1
ARUGA, T
TOCHIHARA, H
MURATA, Y
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (04) : 372 - 375
[5] PSEUDOPOTENTIALS THAT WORK - FROM H TO PU
BACHELET, GB
HAMANN, DR
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1982, 26 (08): : 4199 - 4228
[6] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[7] IDEAL AL-GE(001) INTERFACE - FROM CHEMISORPTION TO METALLIZATION OF THE AL OVERLAYER
BATRA, IP
CIRACI, S
[J]. PHYSICAL REVIEW B, 1984, 29 (12): : 6419 - 6424
[8] A THEORETICAL-STUDY OF THE EPITAXIAL-GROWTH OF METAL OVERLAYERS ON SEMICONDUCTOR SURFACES
BATRA, IP
CIRACI, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 427 - 432
[9] ELECTRONIC-STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES
BATRA, IP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 558 - 563
[10] METALLIZATION AND SCHOTTKY-BARRIER FORMATION
BATRA, IP
CIRACI, S
[J]. PHYSICAL REVIEW B, 1986, 33 (06): : 4312 - 4314