STRUCTURAL AND ELECTRICAL-PROPERTIES OF EPITAXIAL SI ON INSULATING SUBSTRATES

[1] CHANTRE A, 1986, MATER RES SOC S P, V53, P349

[2] DAVAGONA FS, 1972, J ELECTROCHEM SOC, V119, P948

[3] THE REDUCTION OF DISLOCATIONS IN OXYGEN IMPLANTED SILICON-ON-INSULATOR LAYERS BY SEQUENTIAL IMPLANTATION AND ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (10) : 4933 - 4936

[4] EBIC INVESTIGATIONS OF THICK SOI LAYERS [J]. REVUE DE PHYSIQUE APPLIQUEE, 1988, 23 (03): : 281 - 288

[5] NAMAVAR F, 1989, MRS P, V128

[6] MINORITY-CARRIER LIFETIME ANALYSIS OF SILICON EPITAXY AND BULK CRYSTALS WITH NONUNIFORMLY DISTRIBUTED DEFECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (01) : 80 - 84

[7] SCHMIDT D, 1987, CHEM VAPOR DEPOSITIO, V87, P224

[8] DETERMINATION OF MINORITY-CARRIER GENERATION LIFETIME IN BEAM-RECRYSTALLIZED SILICON-ON-INSULATOR STRUCTURE BY USING A DEPLETION-MODE TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 950 - 952

[9] VU DP, 1986, MRS S P SEMICONDUCTO, V53, P357

[10] WU KC, 1986, IEEE T ELECTRON DEV, V33, P1020

[1] CHANTRE A, 1986, MATER RES SOC S P, V53, P349

[2] DAVAGONA FS, 1972, J ELECTROCHEM SOC, V119, P948

[3] THE REDUCTION OF DISLOCATIONS IN OXYGEN IMPLANTED SILICON-ON-INSULATOR LAYERS BY SEQUENTIAL IMPLANTATION AND ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (10) : 4933 - 4936

[4] EBIC INVESTIGATIONS OF THICK SOI LAYERS [J]. REVUE DE PHYSIQUE APPLIQUEE, 1988, 23 (03): : 281 - 288

[5] NAMAVAR F, 1989, MRS P, V128

[6] MINORITY-CARRIER LIFETIME ANALYSIS OF SILICON EPITAXY AND BULK CRYSTALS WITH NONUNIFORMLY DISTRIBUTED DEFECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (01) : 80 - 84

[7] SCHMIDT D, 1987, CHEM VAPOR DEPOSITIO, V87, P224

[8] DETERMINATION OF MINORITY-CARRIER GENERATION LIFETIME IN BEAM-RECRYSTALLIZED SILICON-ON-INSULATOR STRUCTURE BY USING A DEPLETION-MODE TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 950 - 952

[9] VU DP, 1986, MRS S P SEMICONDUCTO, V53, P357

[10] WU KC, 1986, IEEE T ELECTRON DEV, V33, P1020