MINORITY-CARRIER LIFETIME ANALYSIS OF SILICON EPITAXY AND BULK CRYSTALS WITH NONUNIFORMLY DISTRIBUTED DEFECTS

被引：22

作者：

RADZIMSKI, Z ^{[1
]}

HONEYCUTT, J ^{[1
]}

ROZGONYI, GA ^{[1
]}

机构：

[1] TECH UNIV WROCLAW, INST ELECTRON TECHNOL, PL-50372 WROCLAW, POLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 01期

关键词：

D O I：

10.1109/16.2418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：80 / 84

页数：5

共 11 条

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[2]

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[7] GATED DIODE LEAKAGE AND LIFETIME MEASUREMENTS OF MISFIT DISLOCATION GETTERED SI EPITAXY [J].

SALIH, ASM ;

RADZIMSKI, Z ;

HONEYCUTT, J ;

ROZGONYI, GA ;

BEAN, KE ;

LINDBERG, K .

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[8] INTERPRETATION OF SURFACE AND BULK EFFECTS USING PULSED MIS CAPACITOR [J].

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[9]

SCHRODER DK, 1985, VLSI SCI TECHNOLOGY, P419

[10]

VARKER CJ, 1982, S P MAT RES SOC, V14, P187

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