EXTRINSIC GETTERING VIA THE CONTROLLED INTRODUCTION OF MISFIT DISLOCATIONS

[1] BORLAND JO, 1984, ASTM STP, V850, P49

[2] DELLOCA CJ, 1982, VLSI SCI TECHNOLOGY, P5

[3] DYSON W, 1983, DEFECTS SILICON, P246

[4] CRITICAL MICROSTRUCTURE FOR ION-IMPLANTATION GETTERING EFFECTS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (07) : 325 - 327

[5] DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 53 - 55

[6] Maszara W., 1984, VLSI Science and Technology-1984. Proceedings of the Second International Symposium on Very Large Scale Integration Science and Technology. Materials for High Speed/High Density Applications, P36

[7] POISONING AND GETTERING EFFECTS IN SILICON JUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) : 420 - &

[8] PEARCE CW, 1982, VLSI SCI TECHNOLOGY, P53

[9] ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1725 - 1729

[10] GETTERING OF SURFACE AND BULK IMPURITIES IN CZOCHRALSKI SILICON WAFERS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 747 - 749

[1] BORLAND JO, 1984, ASTM STP, V850, P49

[2] DELLOCA CJ, 1982, VLSI SCI TECHNOLOGY, P5

[3] DYSON W, 1983, DEFECTS SILICON, P246

[4] CRITICAL MICROSTRUCTURE FOR ION-IMPLANTATION GETTERING EFFECTS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (07) : 325 - 327

[5] DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 53 - 55

[6] Maszara W., 1984, VLSI Science and Technology-1984. Proceedings of the Second International Symposium on Very Large Scale Integration Science and Technology. Materials for High Speed/High Density Applications, P36

[7] POISONING AND GETTERING EFFECTS IN SILICON JUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) : 420 - &

[8] PEARCE CW, 1982, VLSI SCI TECHNOLOGY, P53

[9] ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1725 - 1729

[10] GETTERING OF SURFACE AND BULK IMPURITIES IN CZOCHRALSKI SILICON WAFERS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 747 - 749