GATED DIODE LEAKAGE AND LIFETIME MEASUREMENTS OF MISFIT DISLOCATION GETTERED SI EPITAXY

被引：15

作者：

SALIH, ASM

RADZIMSKI, Z

HONEYCUTT, J

ROZGONYI, GA

BEAN, KE

LINDBERG, K

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

[2] TEXAS INSTRUMENTS INC,DIV SEMICOND,ADV PROD GRP,SHERMAN,TX 75090

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 23期

关键词：

D O I：

10.1063/1.97765

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1678 / 1680

页数：3

共 9 条

[1]

BORLAND JO, 1984, SOLID STATE TECHNOL, V27, P123

[2]

DYSON W, 1983, DEFECTS SILICON, P246

[3] CRITICAL MICROSTRUCTURE FOR ION-IMPLANTATION GETTERING EFFECTS IN SILICON [J].

GEIPEL, HJ ;

TICE, WK .

APPLIED PHYSICS LETTERS, 1977, 30 (07) :325-327

[4]

GROVE AS, 1967, PHYS TECHNOL S, P298

[5]

RADZIMSKI Z, IN PRESS IEEE T ELEC

[6] GETTERING OF SURFACE AND BULK IMPURITIES IN CZOCHRALSKI SILICON WAFERS [J].

ROZGONYI, GA ;

PEARCE, CW .

APPLIED PHYSICS LETTERS, 1978, 32 (11) :747-749

[7] EXTRINSIC GETTERING VIA THE CONTROLLED INTRODUCTION OF MISFIT DISLOCATIONS [J].

SALIH, AS ;

KIM, HJ ;

DAVIS, RF ;

ROZGONYI, GA .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :419-421

[8] EXTRINSIC GETTERING VIA EPITAXIAL MISFIT DISLOCATIONS - ELECTRICAL CHARACTERIZATION [J].

SALIH, ASM ;

RYU, JS ;

ROZGONYI, GA ;

BEAN, KE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) :475-478

[9] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI [J].

TAN, TY ;

GARDNER, EE ;

TICE, WK .

APPLIED PHYSICS LETTERS, 1977, 30 (04) :175-176

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