THE REDUCTION OF DISLOCATIONS IN OXYGEN IMPLANTED SILICON-ON-INSULATOR LAYERS BY SEQUENTIAL IMPLANTATION AND ANNEALING

被引：44

作者：

HILL, D

FRAUNDORF, P

FRAUNDORF, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.340436

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4933 / 4936

页数：4

共 11 条

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